absolute maximum ratings parameter units i d @ v gs = -10v, t c = 25c continuous drain current -6.5 i d @ v gs = -10v, t c = 100c continuous drain current -4.1 i dm pulsed drain current -25 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.20 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 165 mj i ar avalanche current -6.5 a e ar repetitive avalanche energy 2.5 mj dv/dt peak diode recovery dv/dt -5.5 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5 s) weight 0.42 (typical) g the leadless chip carrier (lcc) package represents the logical next step in the continual evolution of surface mount technology. desinged to be a close replacement for the to-39 package, the lcc will give designers the extra flexibility they need to increase circuit board density. international rectifier has engineered the lcc package to meet the specific needs of the power market by increasing the size of the bottom source pad, thereby enhancing the thermal and electrical performance. the lid of the package is grounded to the source to reduce rf interference. c a www.irf.com 1 lcc-18 product summary part number b vdss r ds(on) i d IRFE9130 -100v 0.30 ? -6.5a features: surface mount small footprint alternative to to-39 package hermetically sealed dynamic dv/dt rating avalanche energy rating simple drive requirements light weight for footnotes refer to the last page IRFE9130 repetitive avalanche and dv/dt rated jantx2n6849u hexfet ? transistor jantxv2n6849u ref:mil-prf-19500/564 100v, p-channel esd rating: class 1c per mil-std-750, method 1020 pd-91716c
IRFE9130 2 www.irf.com thermal resistance parameter min typ max units test conditions r thjc junction to case ? ? 5.0 r thj-pcb junction to pc board ? ? 19 soldered to a copper clad pc board c/w source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? -6.5 i sm pulse source current (body diode) ? ? -25 v sd diode forward voltage ? ? -4.3 v t j = 25c, i s = -6.5a, v gs = 0v t rr reverse recovery time ? ? 250 ns t j = 25c, i f = -6.5a, di/dt -100a/ s q rr reverse recovery charge ? ? 3.0 c v dd -50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage -100 ? ? v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.10 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.30 v gs = -10v, i d = -4.1a resistance ? ? 0.345 v gs = -10v, i d = -6.5a v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -250a g fs forward transconductance 1.9 ? ? s v ds = -15v, i ds = -4.1a i dss zero gate voltage drain current ? ? -25 v ds = -80v, v gs = 0v ? ? -250 v ds = -80v v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 35 v gs = -10v, id = -6.5a q gs gate-to-source charge ? ? 6.8 nc v ds = -50v q gd gate-to-drain (?miller?) charge ? ? 23 t d (on) turn-on delay time ? ? 60 v dd = -50v, i d = -6.5a, t r rise time ? ? 140 r g = 7.5 ? t d (off) turn-off delay time ? ? 140 t f fall time ? ? 140 l s + l d total inductance ? ? c iss input capacitance ? 790 v gs = 0v, v ds = -25v c oss output capacitance ? 340 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 71 ? na nh ns a ? measured from the center of drain pad to center of source pad note: corresponding spice and saber models are available on international rectifier website.
www.irf.com 3 IRFE9130 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v -4.5v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -4.5v 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v -4.5v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -6.5a 1 10 100 4 5 6 7 8 9 v = -50v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
IRFE9130 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 200 400 600 800 1000 1200 1400 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -6.5a v = -20v ds v = -50v ds v = -80v ds 0.1 1 10 0.5 1.0 1.5 2.0 2.5 3.0 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10ms 100 s dc operation in this area limited by r ds (on) 1ms
www.irf.com 5 IRFE9130 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms
1 0.1 %
+ - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRFE9130 6 www.irf.com fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -2.9a -4.1a -6.5a
www.irf.com 7 IRFE9130 footnotes: i sd -6.5a, di/dt -390a/ s, v dd -100v, t j 150c suggested rg =7.5 ? repetitive rating; pulse width limited by maximum junction temperature. v dd = -25v, starting t j = 25c, peak i l = -6.5a, pulse width 300 s; duty cycle 2% case outline and dimensions ? lcc-18 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 07/2015
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